Parameter
|
Symbol
|
Limit
|
Unit
|
Collector-to-Emitter Voltage
|
VCES
|
1200
|
V
|
Gate-to-Emitter Voltage
|
VGES
|
±20
|
DC Collector Current (Tc = 25°C, TJ = 175°C)
|
IC
|
155
|
A
|
DC Collector Current (Tc = 90°C, TJ = 175°C)
|
75
|
Pulsed Collector Current (pulse width limited by maximum TJ)
|
ICM
|
300
|
Diode Forward Current (Tc = 25°C, TJ = 175°C)
|
IF
|
112
|
Diode Forward Current (Tc = 90°C, TJ = 175°C)
|
75
|
Diode Pulsed Current (pulse width limited by maximum TJ)
|
IFM
|
225
|
Turn-off Safe Operating Area (VCE ≤ 1200V, TJ ≤ 175°C)
|
-
|
300
|
A
|
Maximum Power Dissipation (Tc = 25°C, TJ = 175°C)
|
PD(max)
|
625
|
W
|
Operating Junction Temperature
|
TJ
|
-40 to +175
|
°C
|
Storage Temperature
|
Tstg
|
-55 to +150
|
Maximum Lead Temperature for Soldering (1/8" from case for 5 seconds)
|
Tsld
|
260
|