Parameter

Symbol

Limit

Unit

Collector-to-Emitter Voltage

VCES

1200

V

Gate-to-Emitter Voltage

VGES

±20

DC Collector Current (Tc = 25°C, TJ = 175°C)

IC

75

A

DC Collector Current (Tc = 90°C, TJ = 175°C)

52

Pulsed Collector Current (pulse width limited by maximum TJ)

ICM

160

Diode Forward Current (Tc = 25°C, TJ = 175°C)

IF

60

Diode Forward Current (Tc = 90°C, TJ = 175°C)

40

Diode Pulsed Current (pulse width limited by maximum TJ)

IFM

160

Maximum Power Dissipation (Tc = 25°C, TJ = 175°C)

PD(max)

333

W

Maxiumum Junction Temperature

TJ_max

175

°C

Operating Junction Temperature

TJ_op

-40 to +175

Storage Temperature

Tstg

-55 to +150

Maximum Lead Temperature for Soldering (1/8" from case for 5 seconds)

Tsld

260